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More Info:
Equipment description and usage:
The Raith 150 is an ultra-high resolution electron beam lithography system used for writing complex patterns in resists at resolutions of 50 nm for direct-write lithographic applications. The system also has a Scanning Electron Microscope to facilitate imaging and navigation of the sample.
Detailed specifications include:
Nanolithography:
* Direct write, wafer process development at sub-optical resolutions
* Filament type: Schottky Thermal Field Emission
* Selectable beam energy 200 V - 30 kV
* Probe current: 4 pA- 10nA
* Writing field: 1 micron - 800 micron
* Exposure step size: Write field/ 65536
* Resolution (PMMA <100 nm thick): 50 nm lines and 50 nm spaces
* Alignment accuracy (<100 um field): 60 nm
* Field stitching and mix and match accuracy: 60 nm (100 um fields).
* Writing speed: 10 MHz
* Sample handling: full 6" mask and wafer
Metrology:
* SEM inspection and sample navigation
* Image resolution:
2.0 nm @ 20 kV
4.0 nm @ 1 kV
Comments:
Lithography/SEM Metrology
Contact Info:
Yuan Lu
LISE G42
11 Oxford Street
Cambridge, MA 02138
617-495-2822
ylufas.harvard.edu
Jiangdong Deng
LISE G54
11 Oxford Street
Cambridge, MA 02138
617-495-3396
jdengcns.fas.harvard.edu
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fas.harvard.edu
